GaInP/GaAs/Ge三结太阳电池不同能量质子辐照损伤模拟

以GaInP/GaAs/Ge三结太阳电池为研究对象,开展了能量为0.7, 1, 3, 5, 10 MeV的质子辐照损伤模拟研究,建立了三结太阳电池结构模型和不同能量质子辐照模型,获得了不同质子辐照条件下的I-V曲线,光谱响应曲线,结合已有实验结果验证了本文模拟结果,分析了三结太阳电池短路电流、开路电压、最大功率、光谱响应随质子能量的变化规律,利用不同辐照条件下三结太阳电池最大输出功率退化结果,拟合得到了三结太阳电池最大输出功率随位移损伤剂量的退化曲线.研究结果表明,质子辐照会在三结太阳电池中引入位移损伤缺陷,使得少数载流子扩散长度退化幅度随质子能量的减小而增大,从而导致三结太阳电池相关电学参数的退化随质子能量的减小而增大.相同辐照条件下,中电池光谱响应退化幅度远大于顶电池光谱响应退化幅度,中电池抗辐照性能较差,同时中电池长波范围内光谱响应的退化幅度比短波范围更大,表明中电池相关电学参数的退化主要来源于基区损伤.     

振型归一化对梁结构柔度曲率损伤指标的影响

结构柔度矩阵需由质量矩阵归一化振型获得,而质量矩阵归一化振型难以直接测得,限制了柔度曲率类损伤指标的应用。为分析振型归一化方法对梁结构柔度曲率类损伤指标的影响,根据梁结构的刚度、弯矩和位移曲率的关系,建立了均布荷载作用下结构损伤前后位移曲率与损伤程度的理论表达式,实现定量分析均匀荷载面曲率结构损伤程度。提出P-范数振型归一化方法,通过均匀荷载面曲率指标推导了振型质量矩阵归一化系数差x_α与损伤程度的关系。以三跨连续梁算例对理论进行了验证,结果表明,损伤程度定量指标效果良好,不同P-范数振型归一化方法下,损伤程度的偏差可由2x_α估算;2-范数振型归一化方法的损伤识别结果与质量矩阵振型归一化结果最接近,故当无法获得质量矩阵归一化振型时,可采用2-范数归一化振型代替。     

Cold,warm, and hot programming of shape memory polymers

In this article, programming is classified as hot, warm, and cold, based on the temperature zone within which the programming is conducted. The strain and stress locking and releasing mechanisms are discussed within the thermodynamics framework. A new formula is developed for quantifying the strain recovery ratio of cold-programmed SMPs. Stress fixity ratio and stress recovery ratio are also defined based on the understanding of stress locking and recovery mechanisms. State-of-the-art literature on warm and cold programming is reviewed. Well-controlled programming as well as free strain recovery test and constrained stress recovery test are conducted, in order to validate the memory mechanisms discussed in this study. It is found that, while programming temperature has an insignificant effect on the final free shape recovery, it has a significant effect on the stress recovery. The recovery stress programmed by cold programming may be lower, equal to, or higher than that by hot programming, due to the different stress locking mechanisms and other factors such as damage during the thermomechanical cycle. Cold, Warm, and Hot Programming of Shape Memory Polymers © 2016 Wiley Periodicals, Inc. J. Polym. Sci., Part B: Polym. Phys. 2016 , 54, 1319–1339     

Influence of Polarity and Activation Energy in Microwave–Assisted Organic Synthesis (MAOS)

The aim of this work was to determine the parameters that have decisive roles in microwave-assisted reactions and to develop a model, using computational chemistry, to predict a priori the type of reactions that can be improved under microwaves. For this purpose, a computational study was carried out on a variety of reactions, which have been reported to be improved under microwave irradiation. This comprises six types of reactions. The outcomes obtained in this study indicate that the most influential parameters are activation energy, enthalpy, and the polarity of all the species that participate. In addition to this, in most cases, slower reacting systems observe a much greater improvement under microwave irradiation. Furthermore, for these reactions, the presence of a polar component in the reaction (solvent, reagent, susceptor, etc.) is necessary for strong coupling with the electromagnetic radiation. We also quantified that an activation energy of 20–30 kcal mol⁻¹ and a polarity (μ) between 7–20 D of the species involved in the process is required to obtain significant improvements under microwave irradiation.     

UHMWPE纤维的超临界CO_2辅助渗透预处理研究

利用Minitab软件设计实验,以超高分子量聚乙烯纤维(UHMWPE)为原料,研究了在不同的超临界CO_2流体状态下,处理压力、温度和时间等因素对三羟甲基丙烷三甲基丙烯酸酯(TMPTMA)渗入率的影响,确定了最佳因素设置范围;通过单因子实验优化了超临界CO_2处理工艺,并对经过电子束辐照的UHMWPE纤维凝胶含量和蠕变率进行了测试。研究结果表明:处理温度对TMPTMA的渗入率影响最大,其次为压力,时间的影响最小,确定了最优工艺条件为处理压力25MPa,温度80℃,时间30min;TMPTMA渗入率越高,电子束辐照后UHMWPE纤维的增感辐照交联效应和抗蠕变效果越好。     

Identification of radical structures on 1‐pentamethylbenzyl‐3‐ethylimidazoliumsilver(I)bromide and 1,3‐bis(pentamethylbenzyl)‐4,5‐dimethylbenzimidazoliumsilver(I)bromide exposed to gamma rays: an EPR study

1‐Pentamethylbenzyl‐3‐ethylimidazoliumsilver(I)bromide and 1,3‐bis(pentamethylbenzyl)‐4,5dimethylbenzimidazoliumsilver(I)bromide and their Ag⁺ complexes were synthesized and their polycrystal forms were produced by recrystallization in dichloromethane/Et₂O solvent system. Structural determinations were carried out by ¹H NMR and ¹³C NMR with a Varian 400 NMR system using tetramethylsilane as internal standard and CDCl₃ as solvent. The disappearance of acidic N‐heterocyclic carbene proton showed the formation of Ag(I) complexes. Also, elemental analyses were carried out. Electron paramagnetic resonance (EPR) measurements were performed to determine the formed radical structure on the samples irradiated at the room temperature for 72 h by using ⁶⁰Co‐source with dose rate of 0.680 kGy. The EPR measurements were carried out in the temperature range of 200 K–450 K. Identical radicals were determined on the irradiated compounds. It was observed that the shapes of the spectra of the samples were independent of the temperature but, the resonance line intensities changed linearly with the temperature. Also, it was detected that the free radical on the 1‐pentamethylbenzyl‐3‐ethylimidazoliumsilver(I)bromide is not stable compared to that on the 1,3‐bis(pentamethylbenzyl)‐4,5dimethylbenzimidazoliumsilver(I)bromide. Copyright © 2016 John Wiley & Sons, Ltd.     

Radiation damage in polymer films from grazing‐incidence X‐ray scattering measurements

Grazing‐incidence X‐ray scattering (GIXS) is widely used to analyze the crystallinity and nanoscale structure in thin polymer films. However, ionizing radiation will generate free radicals that initiate crosslinking and/or chain scission, and structural damage will impact the ordering kinetics, thermodynamics, and crystallinity in many polymers. We report a simple methodology to screen for beam damage that is based on lithographic principles: films are exposed to patterns of X‐ray radiation, and changes in polymer structure are revealed by immersing the film in a solvent that dissolves the shortest chains. The experiments are implemented with high throughput using the standard beam line instrumentation and a typical GIXS configuration. The extent of damage (at a fixed radiation dose) depends on a range of intrinsic material properties and experimental variables, including the polymer chemistry and molecular weight, exposure environment, film thickness, and angle of incidence. The solubility switch for common polymers is detected within 10–60 s at ambient temperature, and we verified that this first indication of damage corresponds with the onset of network formation in glassy polystyrene and a loss of crystallinity in polyalkylthiophenes. Therefore, grazing‐incidence X‐ray “patterning” offers an efficient approach to determine the appropriate data acquisition times for any GIXS experiment. © 2016 Wiley Periodicals, Inc. J. Polym. Sci., Part B: Polym. Phys. 2016 , 54, 1074–1086     

Can a Six‐Letter Alphabet Increase the Likelihood of Photochemical Assault to the Genetic Code?

In 2014, two unnatural nucleosides, d5SICS and dNaM, were shown to selectively base pair and replicate with high fidelity in a modified strain of E. coli, thus effectively expanding its genetic alphabet from four to six letters. More recently, a significant reduction in cell proliferation was reported in cells cultured with d5SICS, and putatively with dNaM, upon exposure to brief periods of near‐visible radiation. The photosensitizing properties of the lowest‐energy excited triplet state of both d5SICS and dNaM were implicated in their cytotoxicity. Importantly, however, the excited‐state mechanisms by which near‐visible excitation populates the triplet states of d5SICS and dNaM are currently unknown. In this study, steady‐state and time‐resolved spectroscopies are combined with quantum‐chemical calculations in order to reveal the excited‐state relaxation mechanisms leading to efficient population of the triplet states in these unnatural nucleosides in solution. It is shown that excitation of d5SICS or dNaM with near‐visible light leads overwhelmingly to ultrafast population of their triplet states on the femtosecond time scale. The results presented in this work lend strong support to the proposal that photoexcitation of these unnatural nucleosides can accelerate oxidatively generated damage to DNA and other biomolecules within the cellular environment.     

表面效应对铁<100>间隙型位错环的影响

在材料辐照损伤过程中,间隙型位错环的形成及动力学行为严重影响材料在辐照条件下的服役行为.在常用的以体心立方铁为基的合金材料中,1/2<111>和<100>是两种主要的位错环,其对辐照损伤的影响一直都是核材料领域研究的热点之一.在之前的研究中,人们对{111}面与单个1/2<111>位错环的相互作用进行了深入研究,发现表面对位错环性质确实有重要的影响.采用分子动力学方法,在原子尺度详细研究了另一个重要的表面铁{100}面对<100>间隙型位错环动力学过程的影响.模拟发现位错环伯格斯矢量与表面法线方向的关系、距表面的深度、位错环之间的相互作用以及温度等,都对位错环与表面的相互作用产生重要影响,其中,表面作用下的伯格斯矢量的演化以及<100>位错环在此过程中的一维运动首次被发现.基于这些模拟结果,就<100>位错环对表面辐照损伤结构的影响进行详细地研究,给出<100>位错环对表面凹凸结构的贡献,这些结果为理解辐照过程中材料表面的演化提供一种可能的解释.